may.2011.version1.2 magnachipsemiconductorltd . 1 mdu1513Csinglenchanneltrenchmosfet30v absolutemaximumratings(ta=25 o c) characteristics symbol rating unit drainsourcevoltage v dss 30 v gatesourcevoltage v gss 20 v continuousdraincurrent (1) t c =25 o c i d 88.1 a t c =70 o c 70.4 t a =25 o c 26.1 (3) t a =70 o c 20.8 (3) pulseddraincurrent i dm 100 a powerdissipation t c =25 o c p d 62.5 w t c =70 o c 40.0 t a =25 o c 5.5 (3) t a =70 o c 3.5 (3) singlepulseavalancheenergy (2) e as 118 mj junctionandstoragetemperaturerange t j ,t stg 55~150 o c thermalcharacteristics characteristics symbol rating unit thermalresistance,junctiontoambient (1) r ja 22.7 o c/w thermalresistance,junctiontocase r jc 2.0 mdu1513 singlenchanneltrenchmosfet30v,88.1a,4.6m features v ds =30v i d =88.1a@v gs =10v r ds(on) <4.6m @v gs =10v <7.0m @v gs =4.5v 100%uiltested 100%rgtested generaldescription the mdu1513 uses advanced magnachip s mosfet technology, which provides high performance in ons tate resistance, fast switching performance and excellen t quality.mdu1513issuitabledevicefordc/dcconve rter andgeneralpurposeapplications. d g s s s s g g s s s d d d d d d d d powerdfn56
may.2011.version1.2 magnachipsemiconductorltd . 2 mdu1513Csinglenchanneltrenchmosfet30v orderinginformation partnumber temp.range package packing quantity ro hsstatus MDU1513URH 55~150 o c powerdfn56 tape&reel 3000units halogenfree electricalcharacteristics(t j =25 o c) characteristics symbol testcondition min typ max u nit staticcharacteristics drainsourcebreakdownvoltage bv dss i d =250a,v gs =0v 30 v gatethresholdvoltage v gs(th) v ds =v gs ,i d =250a 1.3 1.9 2.7 draincutoffcurrent i dss v ds =30v,v gs =0v 1 a t j =55 o c 5 gateleakagecurrent i gss v gs =20v,v ds =0v 0.1 drainsourceonresistance r ds(on) v gs =10v,i d =20a 4.0 4.6 m t j =125 o c 5.8 6.7 v gs =4.5v,i d =17a 5.8 7.0 forwardtransconductance g fs v ds =5v,i d =10a 35 s dynamiccharacteristics totalgatecharge q g(10v) v ds =15.0v,i d =20a, v gs =10v 20.3 27.0 33.8 nc totalgatecharge q g(4.5v) 9.7 12.9 16.1 gatesourcecharge q gs 5.4 gatedraincharge q gd 4.3 inputcapacitance c iss v ds =15.0v,v gs =0v, f=1.0mhz 1295 1726 2158 pf reversetransfercapacitance c rss 127 169 211 outputcapacitance c oss 247 329 411 turnondelaytime t d(on) v gs =10v,v ds =15.0v, i d =20a,r g =3.0 9.9 ns risetime t r 12.1 turnoffdelaytime t d(off) 33.5 falltime t f 9.5 gateresistance rg f=1mhz 1.5 2.5 drainsourcebodydiodecharacteristics sourcedraindiodeforwardvoltage v sd i s =20a,v gs =0v 0.8 1.1 v bodydiodereverserecoverytime t rr i f =20a,dl/dt=100a/s 27.3 41.0 ns bodydiodereverserecoverycharge q rr 19.7 29.6 nc note: 1.surfacemountedfr4boardbyjedec(jesd517) 2.e as istestedatstartingtj=25 ,l=0.1mh,i as =27a,v dd =27v,v gs =10v. 3.t<10sec
may.2011.version1.2 magnachipsemiconductorltd . 3 mdu1513Csinglenchanneltrenchmosfet30v fig.5transfercharacteristics fig.1onregioncharacteristics fig.2on resistancevariationwith draincurrentandgatevoltage fig.3on resistancevariationwith temperature fig.4on resistancevariationwith gatetosourcevoltage fig.6 body diode forward voltage variation with source current and temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 4.5v 3.5v v gs =10v 5.0v 4.0v 3.0v i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 5 10 15 20 25 30 0 2 4 6 8 10 12 v gs =10v v gs =4.5v drainsourceonresistance[m ] i d ,draincurrent[a] 50 25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 notes: 1.v gs =10v 2.i d =16.0a r ds(on) ,(normalized) drainsourceonresistance t j ,junctiontemperature[ o c] 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 notes: i d =20.0a t a =25 r ds(on) [m ], drainsourceonresistance v gs ,gatetosourcevolatge[v] 0 1 2 3 4 5 0 5 10 15 20 25 30 v gs ,gatesourcevoltage[v] t a =25 notes: v ds =5v i d ,draincurrent[a] 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 10 1 10 0 10 1 t a =25 notes: v gs =0v i dr ,reversedraincurrent[a] v sd ,sourcedrainvoltage[v]
may.2011.version1.2 magnachipsemiconductorltd . 4 mdu1513Csinglenchanneltrenchmosfet30v fig.7gatechargecharacteristics fig.8capacitancecharacteristics fig.9maximumsafeoperatingarea fig.10 maximum drain current v s. casetemperature fig.11 transient thermal response curve 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 90 100 i d ,draincurrent[a] t a ,casetemperature[ ] 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 3 10 3 10 2 10 1 10 0 10 1 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z jc *r jc (t)+t c singlepulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ja (t),thermalresponse t 1 ,rectangularpulseduration[sec] 0 5 10 15 20 25 30 0 400 800 1200 1600 2000 2400 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes; 1.v gs =0v 2.f=1mhz c rss c oss c iss capacitance[pf] v ds ,drainsourcevoltage[v] 0 5 10 15 20 25 30 0 2 4 6 8 10 v ds =15v note:i d =20a v gs ,gatesourcevoltage[v] q g ,totalgatecharge[nc] 10 1 10 0 10 1 10 2 10 1 10 0 10 1 10 2 10s 1s 100ms dc 10ms operationinthisarea islimitedbyr ds(on) singlepulse t j =maxrated t c =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v]
may.2011.version1.2 magnachipsemiconductorltd . 5 mdu1513Csinglenchanneltrenchmosfet30v packagedimension powerdfn56(5x6mm) dimensionsareinmillimeters,unlessotherwisespe cified dimension millimeters min max a 0.90 1.10 b 0.33 0.51 c 0.20 0.34 d1 4.50 5.10 d2 4.22 e 5.90 6.30 e1 5.50 6.10 e2 4.30 e 1.27bsc h 0.41 0.71 k 0.20 l 0.51 0.71 0 12
may.2011.version1.2 magnachipsemiconductorltd . 6 mdu1513Csinglenchanneltrenchmosfet30v disclaimer: theproductsarenotdesignedforuseinhostileen vironments,including,withoutlimitation,aircraft ,nuclearpower generation, medical appliances, and devices or syst ems in which malfunction of any product can reasona bly be expected to result in a personal injury. sellers customers using or selling sellers products for us e in such applicationsdosoattheirownriskandagreetof ullydefendandindemnifyseller. magnachipreservestherighttochangethespecific ationsandcircuitrywithoutnoticeatanytime.ma gnachipdoesnotconsiderresponsibility for use of any circuitry other than circuitry entir ely included in a magnachip product. is a registered trademark of magnachip semiconductorltd.
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